Interleaved Ring-VCO Achieving 90-to-150kHz 1/f Phase-Noise Corner
نویسندگان
چکیده
Ring-VCOs (RVCOs) [1] have been avoided for over a decade for highperformance RF systems due to their much lower FOM (<165dB [2]) than that of their LC counterparts from low to high frequency offsets. Yet, as the cost of ultra-scaled CMOS technologies is escalating, the small-die-area and widetuning-range advantages of RVCOs have attracted more attention recently, aiming to break the FOM limit at the system level. In [2], a type-I PLL succeeds in suppressing the RVCO phase noise (PN) by extending the loop bandwidth to 10MHz (fref/20 → fref/2), facilitating an ultra-compact (0.015mm) frequency synthesizer for 2.4GHz WLAN. However, the type-I PLL only offers 20dB/dec phase-noise suppression for its RVCO. Thus, despite using large transistors (36/0.28μm), the 1/f PN corner (f1/f3) is still high (~4MHz), degrading the overall jitter performance of the PLL. This paper proposes a dual-mode time-interleaved RVCO (TI-RVCO). It offers interesting properties of extending the frequency tuning range and reducing f1/f3 corner (~1MHz → ~100kHz), resulting in a better FOM over a wide range of frequency offsets (10kHz to 1MHz). The achieved f1/f3 noise corner (~90kHz to 150kHz) is comparable to the state-of-the-art LC-VCOs [3, 4].
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